K4F2E3S4HM-MHCJ - 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Tootja arv

Sisemine osa number

tootja

Lühikirjeldus

12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

116095 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on K4F2E3S4HM-MHCJ laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : K4F2E3S4HM-MHCJ

tootja : Samsung Semiconductor

kirjeldus : 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

seeria : DDR3

tihedus : 12 Gb

Org. : x32

kiirus : 3733 Mbps

Pinge : 1.8 / 1.1 / 1.1 V

Temp. : -40 ~ 105 °C

pakend : 200FBGA

toote staatus : Mass Production

kaal : -

tingimus : Uus ja originaal

seotud lingid : K4F2E , K4F2E3S

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