K4F2E3S4HM-MHCJ PDF Teabelehe Lae - 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Osa number : K4F2E3S4HM-MHCJ

tootja : Samsung Semiconductor

kirjeldus : 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

seeria : DDR3

tihedus : 12 Gb

Org. : x32

kiirus : 3733 Mbps

Pinge : 1.8 / 1.1 / 1.1 V

Temp. : -40 ~ 105 °C

pakend : 200FBGA

toote staatus : Mass Production

kaal : -

tingimus : Uus ja originaal

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

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Lühikirjeldus

12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

116095 Pieces

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Osa number	Bränd	kirjeldus
EPM7512AEQC208-12	Intel	IC CPLD 512MC 12NS 208QFP
LC4384C-5TN176I	Lattice Semiconductor Corporation	IC CPLD 384MC 5NS 176TQFP
XC2C512-10PQ208I	Xilinx Inc.	IC CPLD 512MC 9.2NS 208QFP
EPM7128STI100-10NG	Intel	IC CPLD 128MC 10NS 100TQFP
EPM7128AETI144-7N	Intel	IC CPLD 128MC 7.5NS 144TQFP
XCR3384XL-12FT256C	Xilinx Inc.	IC CPLD 384MC 10.8NS 256BGA
XCR3384XL-12PQ208I	Xilinx Inc.	IC CPLD 384MC 10.8NS 208QFP
XCR3384XL-12TQ144I	Xilinx Inc.	IC CPLD 384MC 10.8NS 144QFP
XCR3384XL-7TQG144C	Xilinx Inc.	IC CPLD 384MC 7NS 144QFP
LC4128V-75T128C	Lattice Semiconductor Corporation	IC CPLD 128MC 7.5NS 128TQFP

K4F2E3S4HM-MHCJ Teabelehe