EGL34AHE3_A/I - DIODE GEN PURP 50V 500MA DO213AA

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EGL34AHE3_A/I

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AX-EGL34AHE3_A/I

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 50V 500MA DO213AA

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3661185 Pieces

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~~USD 0.076632~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on EGL34AHE3_A/I laos müüa.

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spetsifikatsioonid EGL34AHE3_A/I

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : EGL34AHE3_A/I

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 50V 500MA DO213AA

seeria : Automotive, AEC-Q101, Superectifier®

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 50V

Praegune - keskmine puhastatud (Io) : 500mA

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 500mA

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 50ns

Praegune - vastupidine leke @ Vr : 5µA @ 50V

Mahtuvus @ Vr, F : 7pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-213AA (Glass)

Tarnija seadme pakett : DO-213AA (GL34)

Töötemperatuur - ristmik : -65°C ~ 175°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : EGL3 , EGL34A

dokumendid EGL34AHE3_A/I

andmelehe : EGL34AHE3_A/I.pdf

Seotud tooted EGL34AHE3_A/I Vishay Semiconductor Diodes Division

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