1N6483HE3/97 - DIODE GEN PURP 800V 1A DO213AB

Tootja arv

1N6483HE3/97

Sisemine osa number

AX-1N6483HE3/97

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 800V 1A DO213AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3523250 Pieces

Viide Hind

~~USD 0.079632~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on 1N6483HE3/97 laos müüa.

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spetsifikatsioonid 1N6483HE3/97

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : 1N6483HE3/97

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 800V 1A DO213AB

seeria : SUPERECTIFIER®

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 800V

Praegune - keskmine puhastatud (Io) : 1A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 1A

Kiirus : Standard Recovery >500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : -

Praegune - vastupidine leke @ Vr : 10µA @ 800V

Mahtuvus @ Vr, F : 8pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-213AB, MELF (Glass)

Tarnija seadme pakett : DO-213AB

Töötemperatuur - ristmik : -65°C ~ 175°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : 1N64 , 1N6483

dokumendid 1N6483HE3/97

andmelehe : 1N6483HE3/97.pdf

Seotud tooted 1N6483HE3/97 Vishay Semiconductor Diodes Division

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