EGL41DHE3_A/I - DIODE GEN PURP 200V 1A DO213AB

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 200V 1A DO213AB
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
3793970 Pieces
Viide Hind
USD 0.07395
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on EGL41DHE3_A/I laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spetsifikatsioonid EGL41DHE3_A/I

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : EGL41DHE3_A/I
tootja : Vishay Semiconductor Diodes Division
kirjeldus : DIODE GEN PURP 200V 1A DO213AB
seeria : Automotive, AEC-Q101, Superectifier®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 50ns
Praegune - vastupidine leke @ Vr : 5µA @ 200V
Mahtuvus @ Vr, F : 20pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-213AB, MELF (Glass)
Tarnija seadme pakett : DO-213AB
Töötemperatuur - ristmik : -65°C ~ 175°C
kaal : -
tingimus : Uus ja originaal
seotud lingid : EGL4 , EGL41D

dokumendid EGL41DHE3_A/I

andmelehe : EGL41DHE3_A/I.pdf

Seotud tooted EGL41DHE3_A/I Vishay Semiconductor Diodes Division

Osa number Bränd kirjeldus Osta

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