NVMFS5C612NLAFT1G - MOSFET N-CH 60V 38A 250A 5DFN

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NVMFS5C612NLAFT1G

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AX-NVMFS5C612NLAFT1G

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 60V 38A 250A 5DFN

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spetsifikatsioonid NVMFS5C612NLAFT1G

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Osa number : NVMFS5C612NLAFT1G

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 60V 38A 250A 5DFN

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 38A (Ta), 250A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.36 mOhm @ 50A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 91nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6660pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 3.8W (Ta), 167W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 5-DFN (5x6) (8-SOFL)

Pakett / kohver : 8-PowerTDFN, 5 Leads

kaal : -

tingimus : Uus ja originaal

seotud lingid : NVMFS , NVMFS5C6

dokumendid NVMFS5C612NLAFT1G

andmelehe : NVMFS5C612NLAFT1G.pdf

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