NVMFS4C302NWFT1G - NFET SO8FL 30V 1.15MO

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NVMFS4C302NWFT1G

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AX-NVMFS4C302NWFT1G

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ON Semiconductor

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NFET SO8FL 30V 1.15MO

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1-2 päeva

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spetsifikatsioonid NVMFS4C302NWFT1G

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NVMFS4C302NWFT1G

tootja : ON Semiconductor

kirjeldus : NFET SO8FL 30V 1.15MO

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 43A (Ta), 241A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.15 mOhm @ 30A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 82nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 5780pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 3.75W (Ta), 115W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 5-DFN (5x6) (8-SOFL)

Pakett / kohver : 8-PowerTDFN, 5 Leads

kaal : -

tingimus : Uus ja originaal

seotud lingid : NVMFS , NVMFS4C3

dokumendid NVMFS4C302NWFT1G

andmelehe : NVMFS4C302NWFT1G.pdf

Seotud tooted NVMFS4C302NWFT1G ON Semiconductor

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