1N4150W-HE3-08 - DIODE GEN PURP 50V 200MA SOD123

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 50V 200MA SOD123
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
10165365 Pieces
Viide Hind
USD 0.0276
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on 1N4150W-HE3-08 laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spetsifikatsioonid 1N4150W-HE3-08

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : 1N4150W-HE3-08
tootja : Vishay Semiconductor Diodes Division
kirjeldus : DIODE GEN PURP 50V 200MA SOD123
seeria : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 50V
Praegune - keskmine puhastatud (Io) : 200mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 200mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : 4ns
Praegune - vastupidine leke @ Vr : 100nA @ 50V
Mahtuvus @ Vr, F : 2.5pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SOD-123
Tarnija seadme pakett : SOD-123
Töötemperatuur - ristmik : -55°C ~ 150°C
kaal : -
tingimus : Uus ja originaal
seotud lingid : 1N41 , 1N4150W

dokumendid 1N4150W-HE3-08

andmelehe : 1N4150W-HE3-08.pdf

Seotud tooted 1N4150W-HE3-08 Vishay Semiconductor Diodes Division

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CAP CER 0.022UF 100V X7R RADIAL.

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