IRFB3206GPBF - MOSFET N-CH 60V 120A TO220AB

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IRFB3206GPBF

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AX-IRFB3206GPBF

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 60V 120A TO220AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

148915 Pieces

Viide Hind

~~USD 1.884~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IRFB3206GPBF laos müüa.

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spetsifikatsioonid IRFB3206GPBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFB3206GPBF

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 60V 120A TO220AB

seeria : HEXFET®

Osa olek : Not For New Designs

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3 mOhm @ 75A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 150µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 170nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6540pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 300W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220AB

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRFB , IRFB32

dokumendid IRFB3206GPBF

andmelehe : IRFB3206GPBF.pdf

Seotud tooted IRFB3206GPBF Infineon Technologies

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