1N5407G R0G - DIODE GEN PURP 800V 3A DO201AD

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1N5407G R0G

Sisemine osa number

AX-1N5407G R0G

tootja

Taiwan Semiconductor Corporation

Lühikirjeldus

DIODE GEN PURP 800V 3A DO201AD

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

4437760 Pieces

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~~USD 0.063222~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on 1N5407G R0G laos müüa.

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spetsifikatsioonid 1N5407G R0G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : 1N5407G R0G

tootja : Taiwan Semiconductor Corporation

kirjeldus : DIODE GEN PURP 800V 3A DO201AD

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 800V

Praegune - keskmine puhastatud (Io) : 3A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 3A

Kiirus : Standard Recovery >500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : -

Praegune - vastupidine leke @ Vr : 5µA @ 800V

Mahtuvus @ Vr, F : 25pF @ 4V, 1MHz

Paigaldus tüüp : Through Hole

Pakett / kohver : DO-201AD, Axial

Tarnija seadme pakett : DO-201AD

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : 1N5 , 1N540

dokumendid 1N5407G R0G

andmelehe : 1N5407G R0G.pdf

Seotud tooted 1N5407G R0G Taiwan Semiconductor Corporation

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