VS-HFA08TB120S-M3 - DIODE GEN PURP 1200V 8A D2PAK

Tootja arv

VS-HFA08TB120S-M3

Sisemine osa number

AX-VS-HFA08TB120S-M3

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 1200V 8A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

307635 Pieces

Viide Hind

~~USD 0.912~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on VS-HFA08TB120S-M3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid VS-HFA08TB120S-M3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : VS-HFA08TB120S-M3

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 1200V 8A D2PAK

seeria : HEXFRED®

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 1200V

Praegune - keskmine puhastatud (Io) : 8A (DC)

Pinge - edasi (Vf) (maksimaalselt) @ kui : 4.3V @ 16A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 95ns

Praegune - vastupidine leke @ Vr : 10µA @ 1200V

Mahtuvus @ Vr, F : -

Paigaldus tüüp : Surface Mount

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Tarnija seadme pakett : TO-263AB (D²PAK)

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : VS-HF , VS-HFA08

dokumendid VS-HFA08TB120S-M3

andmelehe : VS-HFA08TB120S-M3.pdf

Seotud tooted VS-HFA08TB120S-M3 Vishay Semiconductor Diodes Division

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