SCTWA50N120 - MOSFET N-CH 1200V 65A HIP247

Tootja arv

SCTWA50N120

Sisemine osa number

AX-SCTWA50N120

tootja

STMicroelectronics

Lühikirjeldus

MOSFET N-CH 1200V 65A HIP247

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

22778 Pieces

Viide Hind

~~USD 17.2386~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on SCTWA50N120 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SCTWA50N120

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SCTWA50N120

tootja : STMicroelectronics

kirjeldus : MOSFET N-CH 1200V 65A HIP247

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : SiCFET (Silicon Carbide)

Tühjendage toitepingele (Vdss) : 1200V

Praegune - pidev äravool (id) @ 25 ° C : 65A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 20V

Rds sees (max) @ id, Vgs : 69 mOhm @ 40A, 20V

Vgs (th) (maksimaalselt) @ id : 3V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 122nC @ 20V

VG (maksimaalselt) : +25V, -10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1900pF @ 400V

FET funktsioon : -

Võimsuse hajumine (max) : 318W (Tc)

Töötemperatuur : -55°C ~ 200°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : HiP247™

Pakett / kohver : TO-247-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SCT , SCTWA

dokumendid SCTWA50N120

andmelehe : SCTWA50N120.pdf

Seotud tooted SCTWA50N120 STMicroelectronics

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