EGL34BHE3_A/H - DIODE GEN PURP 100V 500MA DO213

Tootja arv

EGL34BHE3_A/H

Sisemine osa number

AX-EGL34BHE3_A/H

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 100V 500MA DO213

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3913680 Pieces

Viide Hind

~~USD 0.071688~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on EGL34BHE3_A/H laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid EGL34BHE3_A/H

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : EGL34BHE3_A/H

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 100V 500MA DO213

seeria : Automotive, AEC-Q101, Superectifier®

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 100V

Praegune - keskmine puhastatud (Io) : 500mA

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 500mA

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 50ns

Praegune - vastupidine leke @ Vr : 5µA @ 100V

Mahtuvus @ Vr, F : 7pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-213AA (Glass)

Tarnija seadme pakett : DO-213AA (GL34)

Töötemperatuur - ristmik : -65°C ~ 175°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : EGL3 , EGL34B

dokumendid EGL34BHE3_A/H

andmelehe : EGL34BHE3_A/H.pdf

Seotud tooted EGL34BHE3_A/H Vishay Semiconductor Diodes Division

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