RJK1003DPN-E0#T2 - MOSFET N-CH 100V 50A TO220

Tootja arv
Sisemine osa number
Lühikirjeldus
MOSFET N-CH 100V 50A TO220
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
332010 Pieces
Viide Hind
USD 0.84504
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on RJK1003DPN-E0#T2 laos müüa.
Saatmine võimalusi ja tarneaeg:
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FEDEX: 2-3 days.
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EMS: 5-8 days.
Normal Post: 10-15 days.
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spetsifikatsioonid RJK1003DPN-E0#T2

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : RJK1003DPN-E0#T2
tootja : Renesas Electronics America
kirjeldus : MOSFET N-CH 100V 50A TO220
seeria : -
Osa olek : Active
FET tüüp : N-Channel
Tehnoloogia : MOSFET (Metal Oxide)
Tühjendage toitepingele (Vdss) : 100V
Praegune - pidev äravool (id) @ 25 ° C : 50A (Ta)
Ajami pinge (max Rds sees, min Rds sees) : 10V
Rds sees (max) @ id, Vgs : 11 mOhm @ 25A, 10V
Vgs (th) (maksimaalselt) @ id : -
Värava laadimine (Qg) (maksimaalselt) @ Vgs : 59nC @ 10V
VG (maksimaalselt) : ±20V
Sisendmahtuvus (Ciss) (Max) @ Vds : 4150pF @ 10V
FET funktsioon : -
Võimsuse hajumine (max) : 125W (Tc)
Töötemperatuur : 150°C (TJ)
Paigaldus tüüp : Through Hole
Tarnija seadme pakett : TO-220AB
Pakett / kohver : TO-220-3
kaal : -
tingimus : Uus ja originaal
seotud lingid : RJK10 , RJK1003D

dokumendid RJK1003DPN-E0#T2

andmelehe : RJK1003DPN-E0#T2.pdf

Seotud tooted RJK1003DPN-E0#T2 Renesas Electronics America

Osa number Bränd kirjeldus Osta

CDR32BP102BJZRAC

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