RS1JL R3G - DIODE GEN PURP 600V 800MA SUBSMA

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RS1JL R3G

Sisemine osa number

AX-RS1JL R3G

tootja

Taiwan Semiconductor Corporation

Lühikirjeldus

DIODE GEN PURP 600V 800MA SUBSMA

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

6323285 Pieces

Viide Hind

~~USD 0.04437~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on RS1JL R3G laos müüa.

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spetsifikatsioonid RS1JL R3G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RS1JL R3G

tootja : Taiwan Semiconductor Corporation

kirjeldus : DIODE GEN PURP 600V 800MA SUBSMA

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 600V

Praegune - keskmine puhastatud (Io) : 800mA

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.3V @ 800mA

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 250ns

Praegune - vastupidine leke @ Vr : 5µA @ 600V

Mahtuvus @ Vr, F : 10pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-219AB

Tarnija seadme pakett : Sub SMA

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : RS1 , RS1J

dokumendid RS1JL R3G

andmelehe : RS1JL R3G.pdf

Seotud tooted RS1JL R3G Taiwan Semiconductor Corporation

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