1N5401GHB0G - DIODE GEN PURP 100V 3A DO201AD
Tootja arv
Sisemine osa number
AX-1N5401GHB0G
Lühikirjeldus
DIODE GEN PURP 100V 3A DO201AD
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
6285040 Pieces
Viide Hind
Meie hind
- (Palun võtke meiega parem hind: [email protected])
- AX Semiconductor on 1N5401GHB0G laos müüa.
- Saatmine võimalusi ja tarneaeg:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Maksevõimalused:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spetsifikatsioonid 1N5401GHB0G
kvaliteedi tagamise :
365 päeva garantii
stock Resource :
Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number :
1N5401GHB0G
tootja :
Taiwan Semiconductor Corporation
kirjeldus :
DIODE GEN PURP 100V 3A DO201AD
seeria :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
100V
Praegune - keskmine puhastatud (Io) :
3A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.1V @ 3A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
-
Praegune - vastupidine leke @ Vr :
5µA @ 100V
Mahtuvus @ Vr, F :
25pF @ 4V, 1MHz
Paigaldus tüüp :
Through Hole
Pakett / kohver :
DO-201AD, Axial
Tarnija seadme pakett :
DO-201AD
Töötemperatuur - ristmik :
-55°C ~ 150°C
kaal :
-
tingimus :
Uus ja originaal
dokumendid 1N5401GHB0G
andmelehe :
1N5401GHB0G.pdf
Seotud tooted 1N5401GHB0G Taiwan Semiconductor Corporation
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