SI7613DN-T1-GE3 - MOSFET P-CH 20V 35A 1212-8 PPAK

Tootja arv

SI7613DN-T1-GE3

Sisemine osa number

AX-SI7613DN-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 20V 35A 1212-8 PPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

919755 Pieces

Viide Hind

~~USD 0.30504~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on SI7613DN-T1-GE3 laos müüa.

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spetsifikatsioonid SI7613DN-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI7613DN-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 20V 35A 1212-8 PPAK

seeria : TrenchFET®

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 35A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 8.7 mOhm @ 17A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 87nC @ 10V

VG (maksimaalselt) : ±16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2620pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 3.8W (Ta), 52.1W (Tc)

Töötemperatuur : -50°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® 1212-8

Pakett / kohver : PowerPAK® 1212-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI761 , SI7613D

dokumendid SI7613DN-T1-GE3

andmelehe : SI7613DN-T1-GE3.pdf

Seotud tooted SI7613DN-T1-GE3 Vishay Siliconix

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