ALD111933PAL - MOSFET 2N-CH 10.6V 8DIP

Tootja arv
Sisemine osa number
Lühikirjeldus
MOSFET 2N-CH 10.6V 8DIP
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
126720 Pieces
Viide Hind
USD 2.214
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on ALD111933PAL laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
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spetsifikatsioonid ALD111933PAL

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : ALD111933PAL
tootja : Advanced Linear Devices Inc.
kirjeldus : MOSFET 2N-CH 10.6V 8DIP
seeria : EPAD®
Osa olek : Active
FET tüüp : 2 N-Channel (Dual) Matched Pair
FET funktsioon : Standard
Tühjendage toitepingele (Vdss) : 10.6V
Praegune - pidev äravool (id) @ 25 ° C : -
Rds sees (max) @ id, Vgs : 500 Ohm @ 5.9V
Vgs (th) (maksimaalselt) @ id : 3.35V @ 1µA
Värava laadimine (Qg) (maksimaalselt) @ Vgs : -
Sisendmahtuvus (Ciss) (Max) @ Vds : 2.5pF @ 5V
Võimsus - max : 500mW
Töötemperatuur : 0°C ~ 70°C (TJ)
Paigaldus tüüp : Through Hole
Pakett / kohver : 8-DIP (0.300", 7.62mm)
Tarnija seadme pakett : 8-PDIP
kaal : -
tingimus : Uus ja originaal
seotud lingid : ALD1 , ALD111

dokumendid ALD111933PAL

andmelehe : ALD111933PAL.pdf

Seotud tooted ALD111933PAL Advanced Linear Devices Inc.

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