FDB045AN08A0-F085 - MOSFET N-CH 75V 19A D2PAK

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FDB045AN08A0-F085

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Lühikirjeldus

MOSFET N-CH 75V 19A D2PAK

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1-2 päeva

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spetsifikatsioonid FDB045AN08A0-F085

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDB045AN08A0-F085

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 75V 19A D2PAK

seeria : Automotive, AEC-Q101, PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 75V

Praegune - pidev äravool (id) @ 25 ° C : 19A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 4.5 mOhm @ 80A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 138nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6600pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 310W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263AB

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDB04 , FDB045AN

dokumendid FDB045AN08A0-F085

andmelehe : FDB045AN08A0-F085.pdf

Seotud tooted FDB045AN08A0-F085 ON Semiconductor

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