GP2M004A065PG - MOSFET N-CH 650V 4A IPAK

Tootja arv
Sisemine osa number
Lühikirjeldus
MOSFET N-CH 650V 4A IPAK
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
21208 Pieces
Viide Hind
USD 0
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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on GP2M004A065PG laos müüa.
Saatmine võimalusi ja tarneaeg:
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Normal Post: 10-15 days.
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spetsifikatsioonid GP2M004A065PG

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : GP2M004A065PG
tootja : Global Power Technologies Group
kirjeldus : MOSFET N-CH 650V 4A IPAK
seeria : -
Osa olek : Obsolete
FET tüüp : N-Channel
Tehnoloogia : MOSFET (Metal Oxide)
Tühjendage toitepingele (Vdss) : 650V
Praegune - pidev äravool (id) @ 25 ° C : 4A (Tc)
Ajami pinge (max Rds sees, min Rds sees) : 10V
Rds sees (max) @ id, Vgs : 2.4 Ohm @ 2A, 10V
Vgs (th) (maksimaalselt) @ id : 5V @ 250µA
Värava laadimine (Qg) (maksimaalselt) @ Vgs : 15nC @ 10V
VG (maksimaalselt) : ±30V
Sisendmahtuvus (Ciss) (Max) @ Vds : 642pF @ 25V
FET funktsioon : -
Võimsuse hajumine (max) : 98.4W (Tc)
Töötemperatuur : -55°C ~ 150°C (TJ)
Paigaldus tüüp : Through Hole
Tarnija seadme pakett : I-PAK
Pakett / kohver : TO-251-3 Short Leads, IPak, TO-251AA
kaal : -
tingimus : Uus ja originaal
seotud lingid : GP2M , GP2M00

dokumendid GP2M004A065PG

andmelehe : GP2M004A065PG.pdf

Seotud tooted GP2M004A065PG Global Power Technologies Group

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