IPB60R125C6ATMA1 - MOSFET N-CH 600V 30A TO263

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IPB60R125C6ATMA1

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AX-IPB60R125C6ATMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 600V 30A TO263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

165205 Pieces

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~~USD 1.698222~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPB60R125C6ATMA1 laos müüa.

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spetsifikatsioonid IPB60R125C6ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPB60R125C6ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 600V 30A TO263

seeria : CoolMOS™

Osa olek : Not For New Designs

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 30A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 125 mOhm @ 14.5A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 960µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 96nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2127pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 219W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263AB)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPB60 , IPB60R12

dokumendid IPB60R125C6ATMA1

andmelehe : IPB60R125C6ATMA1.pdf

Seotud tooted IPB60R125C6ATMA1 Infineon Technologies

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