EDB1316BDBH-1DIT-F-R TR - IC DRAM 1G PARALLEL 134VFBGA

Sisemine osa number
Lühikirjeldus
IC DRAM 1G PARALLEL 134VFBGA
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
69870 Pieces
Viide Hind
USD 0
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on EDB1316BDBH-1DIT-F-R TR laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spetsifikatsioonid EDB1316BDBH-1DIT-F-R TR

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : EDB1316BDBH-1DIT-F-R TR
tootja : Micron Technology Inc.
kirjeldus : IC DRAM 1G PARALLEL 134VFBGA
seeria : -
Osa olek : Active
Mälu tüüp : Volatile
Mälu vorming : DRAM
Tehnoloogia : SDRAM - Mobile LPDDR2
Mälu suurus : 1Gb (64M x 16)
Kella sagedus : 533MHz
Kirjutage tsükli aeg - sõna, leht : -
Juurdepääsu aeg : -
Mäluliides : Parallel
Pinge - toide : 1.14V ~ 1.95V
Töötemperatuur : -40°C ~ 85°C (TC)
Paigaldus tüüp : Surface Mount
Pakett / kohver : 134-VFBGA
Tarnija seadme pakett : 134-VFBGA (10x11.5)
kaal : -
tingimus : Uus ja originaal
seotud lingid : EDB1316 , EDB1316BDBH

dokumendid EDB1316BDBH-1DIT-F-R TR

Seotud tooted EDB1316BDBH-1DIT-F-R TR Micron Technology Inc.

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