IPI057N08N3 G - MOSFET N-CH 80V 80A TO262-3

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IPI057N08N3 G

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AX-IPI057N08N3 G

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 80V 80A TO262-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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8392 Pieces

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spetsifikatsioonid IPI057N08N3 G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPI057N08N3 G

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 80V 80A TO262-3

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 80A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 5.7 mOhm @ 80A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 90µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 69nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4750pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 150W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO262-3

Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPI0 , IPI057

dokumendid IPI057N08N3 G

andmelehe : IPI057N08N3 G.pdf

Seotud tooted IPI057N08N3 G Infineon Technologies

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