TK4A60DB(STA4,Q,M) - MOSFET N-CH 600V 3.7A TO-220SIS

Tootja arv

TK4A60DB(STA4,Q,M)

Sisemine osa number

AX-TK4A60DB(STA4,Q,M)

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

MOSFET N-CH 600V 3.7A TO-220SIS

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

12768 Pieces

Viide Hind

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Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on TK4A60DB(STA4,Q,M) laos müüa.

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spetsifikatsioonid TK4A60DB(STA4,Q,M)

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TK4A60DB(STA4,Q,M)

tootja : Toshiba Semiconductor and Storage

kirjeldus : MOSFET N-CH 600V 3.7A TO-220SIS

seeria : π-MOSVII

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 3.7A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2 Ohm @ 1.9A, 10V

Vgs (th) (maksimaalselt) @ id : 4.4V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 540pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 35W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220SIS

Pakett / kohver : TO-220-3 Full Pack

kaal : -

tingimus : Uus ja originaal

seotud lingid : TK4A60 , TK4A60DB(

dokumendid TK4A60DB(STA4,Q,M)

andmelehe : TK4A60DB(STA4,Q,M).pdf

Seotud tooted TK4A60DB(STA4,Q,M) Toshiba Semiconductor and Storage

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CDR31BP100BJZRAB	Vishay Vitramon	CAP CER 10PF 100V BP 0805.
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WF135218WL40238BJ1	Vishay Beyschlag	CAP CER 4000PF 16KV SCREW.
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WF110250WJ50238BJ1	Vishay Beyschlag	CAP CER 5000PF 14KV SCREW.
WI140316WQ75236BJ3	Vishay Beyschlag	CAP CER 7500PF 22.5KV SCREW.
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