IRF8306MTR1PBF - MOSFET N-CH 30V 23A DIRECTFET

Tootja arv
Sisemine osa number
Lühikirjeldus
MOSFET N-CH 30V 23A DIRECTFET
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
15320 Pieces
Viide Hind
USD 0
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IRF8306MTR1PBF laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
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spetsifikatsioonid IRF8306MTR1PBF

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : IRF8306MTR1PBF
tootja : Infineon Technologies
kirjeldus : MOSFET N-CH 30V 23A DIRECTFET
seeria : HEXFET®
Osa olek : Obsolete
FET tüüp : N-Channel
Tehnoloogia : MOSFET (Metal Oxide)
Tühjendage toitepingele (Vdss) : 30V
Praegune - pidev äravool (id) @ 25 ° C : 23A (Ta), 140A (Tc)
Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V
Rds sees (max) @ id, Vgs : 2.5 mOhm @ 23A, 10V
Vgs (th) (maksimaalselt) @ id : 2.35V @ 100µA
Värava laadimine (Qg) (maksimaalselt) @ Vgs : 38nC @ 4.5V
VG (maksimaalselt) : ±20V
Sisendmahtuvus (Ciss) (Max) @ Vds : 4110pF @ 15V
FET funktsioon : Schottky Diode (Body)
Võimsuse hajumine (max) : 2.1W (Ta), 75W (Tc)
Töötemperatuur : -40°C ~ 150°C (TJ)
Paigaldus tüüp : Surface Mount
Tarnija seadme pakett : DIRECTFET™ MX
Pakett / kohver : DirectFET™ Isometric MX
kaal : -
tingimus : Uus ja originaal
seotud lingid : IRF8 , IRF8306

dokumendid IRF8306MTR1PBF

andmelehe : IRF8306MTR1PBF.pdf

Seotud tooted IRF8306MTR1PBF Infineon Technologies

Osa number Bränd kirjeldus Osta

GRM0225C1E5R6DDAEL

Murata Electronics North America

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