IPB083N10N3GATMA1 - MOSFET N-CH 100V 80A TO263-3

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IPB083N10N3GATMA1

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AX-IPB083N10N3GATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 100V 80A TO263-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

629770 Pieces

Viide Hind

~~USD 0.4455~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPB083N10N3GATMA1 laos müüa.

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spetsifikatsioonid IPB083N10N3GATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPB083N10N3GATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 100V 80A TO263-3

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 80A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 8.3 mOhm @ 73A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 75µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 55nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3980pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 125W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263AB)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPB08 , IPB083N1

dokumendid IPB083N10N3GATMA1

andmelehe : IPB083N10N3GATMA1.pdf

Seotud tooted IPB083N10N3GATMA1 Infineon Technologies

Osa number	Bränd	kirjeldus
PEF220WH10338BK1	Vishay Beyschlag	CAP CER 10000PF 13KV R230 DISK.
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WF135373BQ50238BJ1	Vishay Beyschlag	CAP CER 5000PF 25KV SCREW.
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WF135250WL50238BJ1	Vishay Beyschlag	CAP CER 5000PF 16KV SCREW.
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TF170279BQ50236BJ1	Vishay Beyschlag	CAP CER 5000PF 25KV R85.
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WF165336WQ75238BJ1	Vishay Beyschlag	CAP CER 7500PF 22.5KV SCREW.
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