BYM10-200HE3/96 - DIODE GEN PURP 200V 1A DO213AB

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 200V 1A DO213AB
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
3188155 Pieces
Viide Hind
USD 0.088002
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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on BYM10-200HE3/96 laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
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spetsifikatsioonid BYM10-200HE3/96

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : BYM10-200HE3/96
tootja : Vishay Semiconductor Diodes Division
kirjeldus : DIODE GEN PURP 200V 1A DO213AB
seeria : SUPERECTIFIER®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 1A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 10µA @ 200V
Mahtuvus @ Vr, F : 8pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-213AB, MELF (Glass)
Tarnija seadme pakett : DO-213AB
Töötemperatuur - ristmik : -65°C ~ 175°C
kaal : -
tingimus : Uus ja originaal
seotud lingid : BYM10 , BYM10-2

dokumendid BYM10-200HE3/96

andmelehe : BYM10-200HE3/96.pdf

Seotud tooted BYM10-200HE3/96 Vishay Semiconductor Diodes Division

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CAP CER 5.9PF 50V NP0 0201.

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