FDP027N08B-F102 - MOSFET N-CH 80V 120A TO-220-3

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FDP027N08B-F102

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AX-FDP027N08B-F102

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 80V 120A TO-220-3

RoHS-staatus

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Tarne aeg

1-2 päeva

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130980 Pieces

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~~USD 2.142~~

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AX Semiconductor on FDP027N08B-F102 laos müüa.

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spetsifikatsioonid FDP027N08B-F102

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDP027N08B-F102

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 80V 120A TO-220-3

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2.7 mOhm @ 100A, 10V

Vgs (th) (maksimaalselt) @ id : 4.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 178nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 13530pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 246W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220-3

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDP02 , FDP027N

dokumendid FDP027N08B-F102

andmelehe : FDP027N08B-F102.pdf

Seotud tooted FDP027N08B-F102 ON Semiconductor

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