DMN3012LDG-13 - MOSFET BVDSS 25V-30V POWERDI333

Tootja arv

DMN3012LDG-13

Sisemine osa number

AX-DMN3012LDG-13

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET BVDSS 25V-30V POWERDI333

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

631875 Pieces

Viide Hind

~~USD 0.444012~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on DMN3012LDG-13 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMN3012LDG-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMN3012LDG-13

tootja : Diodes Incorporated

kirjeldus : MOSFET BVDSS 25V-30V POWERDI333

seeria : -

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 10A (Ta), 20A (Tc)

Rds sees (max) @ id, Vgs : 12 mOhm @ 15A, 5V, 6 mOhm @ 15A, 5V

Vgs (th) (maksimaalselt) @ id : 2.1V @ 250µA, 1.15V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 6.1nC @ 4.5V, 12.6nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 850pF @ 15V, 1480pF @ 15V

Võimsus - max : 2.2W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-PowerLDFN

Tarnija seadme pakett : PowerDI3333-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMN3 , DMN301

dokumendid DMN3012LDG-13

andmelehe : DMN3012LDG-13.pdf

Seotud tooted DMN3012LDG-13 Diodes Incorporated

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