GPAS1007 MNG - DIODE GEN PURP 10A TO263AB

Tootja arv

GPAS1007 MNG

Sisemine osa number

AX-GPAS1007 MNG

tootja

Taiwan Semiconductor Corporation

Lühikirjeldus

DIODE GEN PURP 10A TO263AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1791590 Pieces

Viide Hind

~~USD 0.1566~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on GPAS1007 MNG laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid GPAS1007 MNG

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : GPAS1007 MNG

tootja : Taiwan Semiconductor Corporation

kirjeldus : DIODE GEN PURP 10A TO263AB

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : -

Praegune - keskmine puhastatud (Io) : 10A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 10A

Kiirus : Standard Recovery >500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : -

Praegune - vastupidine leke @ Vr : 5µA @ 1000V

Mahtuvus @ Vr, F : 50pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Tarnija seadme pakett : TO-263AB (D²PAK)

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : GPAS , GPAS10

dokumendid GPAS1007 MNG

andmelehe : GPAS1007 MNG.pdf

Seotud tooted GPAS1007 MNG Taiwan Semiconductor Corporation

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