IPD60R1K5CEAUMA1 - MOSFET N-CHANNEL 650V 5A TO252

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IPD60R1K5CEAUMA1

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AX-IPD60R1K5CEAUMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CHANNEL 650V 5A TO252

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1711210 Pieces

Viide Hind

~~USD 0.163956~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPD60R1K5CEAUMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IPD60R1K5CEAUMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPD60R1K5CEAUMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CHANNEL 650V 5A TO252

seeria : CoolMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 650V

Praegune - pidev äravool (id) @ 25 ° C : 5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.5 Ohm @ 1.1A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 90µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 9.4nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 200pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 49W (Tc)

Töötemperatuur : -40°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO252

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPD60 , IPD60R1K

dokumendid IPD60R1K5CEAUMA1

andmelehe : IPD60R1K5CEAUMA1.pdf

Seotud tooted IPD60R1K5CEAUMA1 Infineon Technologies

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