IPD65R380E6BTMA1 - MOSFET N-CH 650V 10.6A TO252

Tootja arv
Sisemine osa number
Lühikirjeldus
MOSFET N-CH 650V 10.6A TO252
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
15752 Pieces
Viide Hind
USD 0
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPD65R380E6BTMA1 laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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spetsifikatsioonid IPD65R380E6BTMA1

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : IPD65R380E6BTMA1
tootja : Infineon Technologies
kirjeldus : MOSFET N-CH 650V 10.6A TO252
seeria : CoolMOS™
Osa olek : Obsolete
FET tüüp : N-Channel
Tehnoloogia : MOSFET (Metal Oxide)
Tühjendage toitepingele (Vdss) : 650V
Praegune - pidev äravool (id) @ 25 ° C : 10.6A (Tc)
Ajami pinge (max Rds sees, min Rds sees) : 10V
Rds sees (max) @ id, Vgs : 380 mOhm @ 3.2A, 10V
Vgs (th) (maksimaalselt) @ id : 3.5V @ 320µA
Värava laadimine (Qg) (maksimaalselt) @ Vgs : 39nC @ 10V
VG (maksimaalselt) : ±20V
Sisendmahtuvus (Ciss) (Max) @ Vds : 710pF @ 100V
FET funktsioon : -
Võimsuse hajumine (max) : 83W (Tc)
Töötemperatuur : -55°C ~ 150°C (TJ)
Paigaldus tüüp : Surface Mount
Tarnija seadme pakett : PG-TO252-3
Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63
kaal : -
tingimus : Uus ja originaal
seotud lingid : IPD65 , IPD65R38

dokumendid IPD65R380E6BTMA1

andmelehe : IPD65R380E6BTMA1.pdf

Seotud tooted IPD65R380E6BTMA1 Infineon Technologies

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