IPD60R520C6ATMA1 - MOSFET N-CH 600V 8.1A TO252

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IPD60R520C6ATMA1

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AX-IPD60R520C6ATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 600V 8.1A TO252

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

21704 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPD60R520C6ATMA1 laos müüa.

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spetsifikatsioonid IPD60R520C6ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPD60R520C6ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 600V 8.1A TO252

seeria : CoolMOS™ C6

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 8.1A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 520 mOhm @ 2.8A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 230µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 23.4nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 512pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 66W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO252-3

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPD60 , IPD60R52

dokumendid IPD60R520C6ATMA1

andmelehe : IPD60R520C6ATMA1.pdf

Seotud tooted IPD60R520C6ATMA1 Infineon Technologies

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