IPD122N10N3GBTMA1 - MOSFET N-CH 100V 59A TO252-3

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IPD122N10N3GBTMA1

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AX-IPD122N10N3GBTMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 100V 59A TO252-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

15744 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPD122N10N3GBTMA1 laos müüa.

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spetsifikatsioonid IPD122N10N3GBTMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPD122N10N3GBTMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 100V 59A TO252-3

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 59A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 12.2 mOhm @ 46A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 46µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 35nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2500pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 94W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO252-3

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPD12 , IPD122N1

dokumendid IPD122N10N3GBTMA1

andmelehe : IPD122N10N3GBTMA1.pdf

Seotud tooted IPD122N10N3GBTMA1 Infineon Technologies

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