SQM110N05-06L_GE3 - MOSFET N-CH 55V 110A TO263

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SQM110N05-06L_GE3

Sisemine osa number

AX-SQM110N05-06L_GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 55V 110A TO263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

283395 Pieces

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~~USD 0.99~~

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AX Semiconductor on SQM110N05-06L_GE3 laos müüa.

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spetsifikatsioonid SQM110N05-06L_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQM110N05-06L_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 55V 110A TO263

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 55V

Praegune - pidev äravool (id) @ 25 ° C : 110A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 6 mOhm @ 30A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 110nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4440pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 157W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263 (D2Pak)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQM11 , SQM110N0

dokumendid SQM110N05-06L_GE3

andmelehe : SQM110N05-06L_GE3.pdf

Seotud tooted SQM110N05-06L_GE3 Vishay Siliconix

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