UGB12JTHE3/81 - DIODE GEN PURP 600V 12A TO263AB

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UGB12JTHE3/81

Sisemine osa number

AX-UGB12JTHE3/81

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 600V 12A TO263AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

13856 Pieces

Viide Hind

~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on UGB12JTHE3/81 laos müüa.

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spetsifikatsioonid UGB12JTHE3/81

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : UGB12JTHE3/81

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 600V 12A TO263AB

seeria : -

Osa olek : Obsolete

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 600V

Praegune - keskmine puhastatud (Io) : 12A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.75V @ 12A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 50ns

Praegune - vastupidine leke @ Vr : 30µA @ 600V

Mahtuvus @ Vr, F : -

Paigaldus tüüp : Surface Mount

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Tarnija seadme pakett : TO-263AB

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : UGB1 , UGB12J

dokumendid UGB12JTHE3/81

andmelehe : UGB12JTHE3/81.pdf

Seotud tooted UGB12JTHE3/81 Vishay Semiconductor Diodes Division

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