RN2910FE,LF(CT - TRANS 2PNP PREBIAS 0.1W ES6

Tootja arv

RN2910FE,LF(CT

Sisemine osa number

AX-RN2910FE,LF(CT

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

TRANS 2PNP PREBIAS 0.1W ES6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

17461055 Pieces

Viide Hind

~~USD 0.016068~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on RN2910FE,LF(CT laos müüa.

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spetsifikatsioonid RN2910FE,LF(CT

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RN2910FE,LF(CT

tootja : Toshiba Semiconductor and Storage

kirjeldus : TRANS 2PNP PREBIAS 0.1W ES6

seeria : -

Osa olek : Active

Transistori tüüp : 2 PNP - Pre-Biased (Dual)

Praegune - koguja (Ic) (maksimaalselt) : 100mA

Pinge - kollektori emitteri jaotus (max) : 50V

Takisti - alus (R1) : 4.7 kOhms

Takisti - emitteri alus (R2) : -

Alalisvoolu võimendus (hFE) (min) @ Ic, Vce : 120 @ 1mA, 5V

Vce küllastus (maksimaalselt) @ Ib, Ic : 300mV @ 250µA, 5mA

Praegune - koguja väljalülitus (max) : 100nA (ICBO)

Sagedus - üleminek : 200MHz

Võimsus - max : 100mW

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOT-563, SOT-666

Tarnija seadme pakett : ES6

kaal : -

tingimus : Uus ja originaal

seotud lingid : RN29 , RN2910F

dokumendid RN2910FE,LF(CT

andmelehe : RN2910FE,LF(CT.pdf

Seotud tooted RN2910FE,LF(CT Toshiba Semiconductor and Storage

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