W987D2HBJX6E TR - IC DRAM 128M PARALLEL 90VFBGA

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W987D2HBJX6E TR

Sisemine osa number

AX-W987D2HBJX6E TR

tootja

Winbond Electronics

Lühikirjeldus

IC DRAM 128M PARALLEL 90VFBGA

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

238060 Pieces

Viide Hind

~~USD 1.310346~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on W987D2HBJX6E TR laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid W987D2HBJX6E TR

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : W987D2HBJX6E TR

tootja : Winbond Electronics

kirjeldus : IC DRAM 128M PARALLEL 90VFBGA

seeria : -

Osa olek : Not For New Designs

Mälu tüüp : Volatile

Mälu vorming : DRAM

Tehnoloogia : SDRAM - Mobile LPSDR

Mälu suurus : 128Mb (4M x 32)

Kella sagedus : 166MHz

Kirjutage tsükli aeg - sõna, leht : 15ns

Juurdepääsu aeg : 5.4ns

Mäluliides : Parallel

Pinge - toide : 1.7V ~ 1.95V

Töötemperatuur : -25°C ~ 85°C (TC)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 90-TFBGA

Tarnija seadme pakett : 90-VFBGA (8x13)

kaal : -

tingimus : Uus ja originaal

seotud lingid : W987D , W987D2H

dokumendid W987D2HBJX6E TR

andmelehe : W987D2HBJX6E TR.pdf

Seotud tooted W987D2HBJX6E TR Winbond Electronics

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