GPAS1006 MNG - DIODE GEN PURP 800V 10A TO263AB

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 800V 10A TO263AB
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
1791590 Pieces
Viide Hind
USD 0.1566
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on GPAS1006 MNG laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spetsifikatsioonid GPAS1006 MNG

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : GPAS1006 MNG
tootja : Taiwan Semiconductor Corporation
kirjeldus : DIODE GEN PURP 800V 10A TO263AB
seeria : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 800V
Praegune - keskmine puhastatud (Io) : 10A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 10A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 5µA @ 800V
Mahtuvus @ Vr, F : 50pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett : TO-263AB (D²PAK)
Töötemperatuur - ristmik : -55°C ~ 150°C
kaal : -
tingimus : Uus ja originaal
seotud lingid : GPAS , GPAS10

dokumendid GPAS1006 MNG

andmelehe : GPAS1006 MNG.pdf

Seotud tooted GPAS1006 MNG Taiwan Semiconductor Corporation

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