ALD1110EPAL - MOSFET 2N-CH 10V 8DIP
Tootja arv
Sisemine osa number
AX-ALD1110EPAL
tootja
Lühikirjeldus
MOSFET 2N-CH 10V 8DIP
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
71950 Pieces
Viide Hind
Meie hind
- (Palun võtke meiega parem hind: [email protected])
- AX Semiconductor on ALD1110EPAL laos müüa.
- Saatmine võimalusi ja tarneaeg:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Maksevõimalused:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spetsifikatsioonid ALD1110EPAL
kvaliteedi tagamise :
365 päeva garantii
stock Resource :
Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number :
ALD1110EPAL
tootja :
Advanced Linear Devices Inc.
kirjeldus :
MOSFET 2N-CH 10V 8DIP
seeria :
EPAD®
Osa olek :
Active
FET tüüp :
2 N-Channel (Dual) Matched Pair
FET funktsioon :
Standard
Tühjendage toitepingele (Vdss) :
10V
Praegune - pidev äravool (id) @ 25 ° C :
-
Rds sees (max) @ id, Vgs :
500 Ohm @ 5V
Vgs (th) (maksimaalselt) @ id :
1.01V @ 1µA
Värava laadimine (Qg) (maksimaalselt) @ Vgs :
-
Sisendmahtuvus (Ciss) (Max) @ Vds :
2.5pF @ 5V
Võimsus - max :
600mW
Töötemperatuur :
0°C ~ 70°C (TJ)
Paigaldus tüüp :
Through Hole
Pakett / kohver :
8-DIP (0.300", 7.62mm)
Tarnija seadme pakett :
8-PDIP
kaal :
-
tingimus :
Uus ja originaal
dokumendid ALD1110EPAL
andmelehe :
ALD1110EPAL.pdf
Seotud tooted ALD1110EPAL Advanced Linear Devices Inc.
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