ES2BAHR3G - DIODE GEN PURP 100V 2A DO214AC
Tootja arv
Sisemine osa number
AX-ES2BAHR3G
Lühikirjeldus
DIODE GEN PURP 100V 2A DO214AC
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
3899000 Pieces
Viide Hind
Meie hind
- (Palun võtke meiega parem hind: [email protected])
- AX Semiconductor on ES2BAHR3G laos müüa.
- Saatmine võimalusi ja tarneaeg:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Maksevõimalused:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spetsifikatsioonid ES2BAHR3G
kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : ES2BAHR3G
tootja : Taiwan Semiconductor Corporation
kirjeldus : DIODE GEN PURP 100V 2A DO214AC
seeria : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 2A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 950mV @ 2A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 35ns
Praegune - vastupidine leke @ Vr : 10µA @ 100V
Mahtuvus @ Vr, F : 25pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AC, SMA
Tarnija seadme pakett : DO-214AC (SMA)
Töötemperatuur - ristmik : -55°C ~ 150°C
kaal : -
tingimus : Uus ja originaal
dokumendid ES2BAHR3G
andmelehe : ES2BAHR3G.pdf
Seotud tooted ES2BAHR3G Taiwan Semiconductor Corporation
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