SQM120N10-3M8_GE3 - MOSFET N-CH 100V 120A TO263

Tootja arv

SQM120N10-3M8_GE3

Sisemine osa number

AX-SQM120N10-3M8_GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 100V 120A TO263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

223725 Pieces

Viide Hind

~~USD 1.25403~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on SQM120N10-3M8_GE3 laos müüa.

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spetsifikatsioonid SQM120N10-3M8_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQM120N10-3M8_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 100V 120A TO263

seeria : Automotive, AEC-Q101, TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3.8 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 190nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 7230pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 375W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263 (D²Pak)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQM12 , SQM120N1

dokumendid SQM120N10-3M8_GE3

andmelehe : SQM120N10-3M8_GE3.pdf

Seotud tooted SQM120N10-3M8_GE3 Vishay Siliconix

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