S3JHE3/9AT - DIODE GEN PURP 600V 3A DO214AB

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S3JHE3/9AT

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AX-S3JHE3/9AT

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Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 600V 3A DO214AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

12888 Pieces

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AX Semiconductor on S3JHE3/9AT laos müüa.

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spetsifikatsioonid S3JHE3/9AT

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : S3JHE3/9AT

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 600V 3A DO214AB

seeria : -

Osa olek : Obsolete

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 600V

Praegune - keskmine puhastatud (Io) : 3A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.15V @ 2.5A

Kiirus : Standard Recovery >500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 2.5µs

Praegune - vastupidine leke @ Vr : 10µA @ 600V

Mahtuvus @ Vr, F : 60pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-214AB, SMC

Tarnija seadme pakett : DO-214AB (SMC)

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : S3J , S3JHE

dokumendid S3JHE3/9AT

andmelehe : S3JHE3/9AT.pdf

Seotud tooted S3JHE3/9AT Vishay Semiconductor Diodes Division

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