IPU13N03LA G - MOSFET N-CH 25V 30A TO-251

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IPU13N03LA G

Sisemine osa number

AX-IPU13N03LA G

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 25V 30A TO-251

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

65865 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPU13N03LA G laos müüa.

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spetsifikatsioonid IPU13N03LA G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPU13N03LA G

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 25V 30A TO-251

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 25V

Praegune - pidev äravool (id) @ 25 ° C : 30A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 12.8 mOhm @ 30A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 20µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8.3nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1043pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 46W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : P-TO251-3-1

Pakett / kohver : TO-251-3 Short Leads, IPak, TO-251AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPU1 , IPU13N

dokumendid IPU13N03LA G

andmelehe : IPU13N03LA G.pdf

Seotud tooted IPU13N03LA G Infineon Technologies

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