IPB180N03S4LH0ATMA1 - MOSFET N-CH 30V 180A TO263-7-3

Tootja arv

IPB180N03S4LH0ATMA1

Sisemine osa number

AX-IPB180N03S4LH0ATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 30V 180A TO263-7-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

238160 Pieces

Viide Hind

~~USD 1.17801~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPB180N03S4LH0ATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IPB180N03S4LH0ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPB180N03S4LH0ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 30V 180A TO263-7-3

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 180A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 0.95 mOhm @ 100A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 200µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 300nC @ 10V

VG (maksimaalselt) : ±16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 23000pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 250W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO263-7-3

Pakett / kohver : TO-263-7, D²Pak (6 Leads + Tab)

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPB180 , IPB180N03

dokumendid IPB180N03S4LH0ATMA1

andmelehe : IPB180N03S4LH0ATMA1.pdf

Seotud tooted IPB180N03S4LH0ATMA1 Infineon Technologies

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