IRFS3206PBF - MOSFET N-CH 60V 120A D2PAK

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IRFS3206PBF

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AX-IRFS3206PBF

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 60V 120A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

9255 Pieces

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IRFS3206PBF laos müüa.

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spetsifikatsioonid IRFS3206PBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFS3206PBF

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 60V 120A D2PAK

seeria : HEXFET®

Osa olek : Discontinued at Digi-Key

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3 mOhm @ 75A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 150µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 170nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6540pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 300W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D2PAK

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRF , IRFS3

dokumendid IRFS3206PBF

andmelehe : IRFS3206PBF.pdf

Seotud tooted IRFS3206PBF Infineon Technologies

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