NVMFSW6D1N08HT1G - T8 80V 1 PART PROLIFERATI

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NVMFSW6D1N08HT1G

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AX-NVMFSW6D1N08HT1G

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ON Semiconductor

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T8 80V 1 PART PROLIFERATI

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spetsifikatsioonid NVMFSW6D1N08HT1G

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stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NVMFSW6D1N08HT1G

tootja : ON Semiconductor

kirjeldus : T8 80V 1 PART PROLIFERATI

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 17A (Ta), 89A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 5.5 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 120µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 32nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2085pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 3.8W (Ta), 104W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 5-DFN (5x6) (8-SOFL)

Pakett / kohver : 8-PowerTDFN, 5 Leads

kaal : -

tingimus : Uus ja originaal

seotud lingid : NVMFS , NVMFSW6D

dokumendid NVMFSW6D1N08HT1G

andmelehe : NVMFSW6D1N08HT1G.pdf

Seotud tooted NVMFSW6D1N08HT1G ON Semiconductor

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