VS-ENQ030L120S - IGBT 1200V 61A 216W EMIPAK-1B
Tootja arv
Sisemine osa number
Lühikirjeldus
IGBT 1200V 61A 216W EMIPAK-1B
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
6336 Pieces
Viide Hind
Meie hind
- (Palun võtke meiega parem hind: [email protected])
- AX Semiconductor on VS-ENQ030L120S laos müüa.
- Saatmine võimalusi ja tarneaeg:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Maksevõimalused:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spetsifikatsioonid VS-ENQ030L120S
kvaliteedi tagamise :
365 päeva garantii
stock Resource :
Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number :
VS-ENQ030L120S
tootja :
Vishay Semiconductor Diodes Division
kirjeldus :
IGBT 1200V 61A 216W EMIPAK-1B
seeria :
-
Osa olek :
Active
IGBT tüüp :
Trench
Seadistamine :
Three Level Inverter
Pinge - kollektori emitteri jaotus (max) :
1200V
Praegune - koguja (Ic) (maksimaalselt) :
61A
Võimsus - max :
216W
Vce (sees) (max) @ Vge, Ic :
2.52V @ 15V, 30A
Praegune - koguja väljalülitus (max) :
230µA
Sisendmahtuvus (Cies) @ Vce :
3.34nF @ 30V
Sisend :
Standard
NTC termistor :
Yes
Töötemperatuur :
150°C (TJ)
Paigaldus tüüp :
Chassis Mount
Pakett / kohver :
EMIPAK-1B
Tarnija seadme pakett :
EMIPAK-1B
kaal :
-
tingimus :
Uus ja originaal
dokumendid VS-ENQ030L120S
andmelehe :
VS-ENQ030L120S.pdf
Seotud tooted VS-ENQ030L120S Vishay Semiconductor Diodes Division
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