FCD4N60TM_WS - MOSFET N-CH 600V 3.9A DPAK

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FCD4N60TM_WS

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AX-FCD4N60TM_WS

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 600V 3.9A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

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1-2 päeva

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AX Semiconductor on FCD4N60TM_WS laos müüa.

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spetsifikatsioonid FCD4N60TM_WS

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Osa number : FCD4N60TM_WS

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 600V 3.9A DPAK

seeria : SuperFET™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 3.9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.2 Ohm @ 2A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 16.6nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 540pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 50W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D-Pak

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FCD4 , FCD4N6

dokumendid FCD4N60TM_WS

andmelehe : FCD4N60TM_WS.pdf

Seotud tooted FCD4N60TM_WS ON Semiconductor

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