1N6483-E3/97 - DIODE GEN PURP 800V 1A DO213AB
Tootja arv
Sisemine osa number
AX-1N6483-E3/97
Lühikirjeldus
DIODE GEN PURP 800V 1A DO213AB
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
5126700 Pieces
Viide Hind
Meie hind
- (Palun võtke meiega parem hind: [email protected])
- AX Semiconductor on 1N6483-E3/97 laos müüa.
- Saatmine võimalusi ja tarneaeg:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Maksevõimalused:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spetsifikatsioonid 1N6483-E3/97
kvaliteedi tagamise :
365 päeva garantii
stock Resource :
Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number :
1N6483-E3/97
tootja :
Vishay Semiconductor Diodes Division
kirjeldus :
DIODE GEN PURP 800V 1A DO213AB
seeria :
SUPERECTIFIER®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
800V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.1V @ 1A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
-
Praegune - vastupidine leke @ Vr :
10µA @ 800V
Mahtuvus @ Vr, F :
8pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-213AB, MELF (Glass)
Tarnija seadme pakett :
DO-213AB
Töötemperatuur - ristmik :
-65°C ~ 175°C
kaal :
-
tingimus :
Uus ja originaal
dokumendid 1N6483-E3/97
andmelehe :
1N6483-E3/97.pdf
Seotud tooted 1N6483-E3/97 Vishay Semiconductor Diodes Division
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